| Part Number | Package | Band(MHz) | Ppeak(W) | Pout(dBm) | Eff@Pout(%) | Power Gain(dB) | Status | Download |
|---|---|---|---|---|---|---|---|---|
| DXG1CH27A-200EF* | 780P2 | 2496~2690 | 220 | 45.0 | 50.0 | 14.1 | Released Product | |
| DXG2CH27A-500EFV* | 780P2 | 2500~2700 | 500 | 47.2 | 52.9 | 15.0 | Released Product | |
| D2H210DE1 | ||||||||
| D2H185DE1 | ||||||||
| DXG1CH38A-200EF* | 780P2 | 3300~3800 | 200 | 44.5 | 45.0 | 15.3 | Released Product | |
| D2H150DE1 | ||||||||
| DXG2CH38A-450EFV* | 780P2 | 3300~3800 | 450 | 47.5 | 46.0 | 14.5 | Released Product | |
| D2H135DE1 | ||||||||
| DXG1CHD8A-F2EF* | 780P2 | 3300~3800 | 450 | 48.5 | 42.0 | 14.0 | Released Product | |
| D2H120DE1 | ||||||||
| DXG2CH50A-200EF* | 780P2 | 4800~5000 | 200 | 44.5 | 44.2 | 14.2 | Released Product | |
| D2H095DE1 | ||||||||
| DOD1H0015-1800EF | 1230P2 | 915 | 1800 | 61.5 | 79.0 | 18.0 | Released Product | |
| D2H065DE1 | ||||||||
| D2H065DB1 | ||||||||
| D2H055DB1 | ||||||||
| DOD1H2425-600EF | 1230P2 | 2435~2465 | 600 | 57.4 | 73.5 | 14.7 | Released Product | |
| D2H046DA1 | ||||||||
| D2H042DB1 | ||||||||
| D2H039DB1 |
DXG1CH27A-200EF is a 200 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 2496 MHz to 2690 MHz cellular base station applications. It features input matching, wide instantaneous bandwidth and an earless thermally-enhanced package.
Parameter | Value | Unit |
Frequency (Min.) | 2496 | MHz |
Frequency (Max.) | 2690 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 53.4 | dBm |
Power Gain @ 2595 MHz | 14.1 | dB |
Efficiency @ 2595 MHz | 50.0 | % |
ACPR @ 2595 MHz | -30.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 120 mA, VGSB = - 5.3 V, Pout = 45.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2CH27A-500EFV is a 500 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2500 MHz to 2700 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 2500 | MHz |
Frequency (Max.) | 2700 | MHz |
Supply Voltage (Typ.) | 47 | V |
56.7Psat (Typ.) | 56.7 | dBm |
Power Gain @ 2593 MHz | 15.0 | dB |
Efficiency @ 2593 MHz | 52.9 | % |
| ACPR @ 2593 MHz | -32.9 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 47 V, IDQA = 200 mA, VGSB = - 5.5 V, Pout = 47.2 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
D2H210DE1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT） ，具有高效率、高增益、易于匹配、宽带宽等特点 ，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 855*4860 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 210 | W |
| 效率 | 80 | % |
| 增益 | 20.5 | dB |
效率和增益指标为对应2.6GHz测试频点 、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 738 mA, 频率 = 2.6 GHz
D2H185DE1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率 、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择 。
| 参数 | 值 | 单位 |
| 产品尺寸 | 905*4125 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 185 | W |
| 效率 | 80 | % |
| 增益 | 20.0 | dB |
效率和增益指标为对应2.6GHz测试频点 、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 655 mA, 频率 = 2.6 GHz
DXG1CH38A-200EF is a 200 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 3300 MHz to 3800 MHz cellular base station applications. It features input matching, wideband and a thermally-enhanced package.
Parameter | Value | Unit |
Frequency (Min.) | 3300 | MHz |
Frequency (Max.) | 3800 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 53.0 | dBm |
Power Gain @ 3500 MHz | 15.3 | dB |
Efficiency @ 3500 MHz | 45.0 | % |
ACPR @ 3500 MHz | -30.0 | dBC |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heat sink, test condition: VDS = 48 V, IDQA = 180 mA, VGSB = - 5.0 V, Pout = 44.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
D2H150DE1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率 、高增益 、易于匹配 、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 795*3410 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 150 | W |
| 效率 | 80 | % |
| 增益 | 20.4 | dB |
效率和增益指标为对应2.6GHz测试频点 、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 504 mA, 频率 = 2.6 GHz
DXG2CH38A-450EFV is a 450 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 3300 | MHz |
Frequency (Max.) | 3800 | MHz |
Supply Voltage (Typ.) | 50 | V |
Psat (Typ.) | 56.7 | dBm |
Power Gain @ 3500 MHz | 14.7 | dB |
Efficiency @ 3500 MHz | 46 | % |
| ACPR @ 3500 MHz | -34.2 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, IDQA = 450 mA, VGSB = - 5.1 V, Pout = 47.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
D2H135DE1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点 ，是各种射频和微波应用的理想选择 。
| 参数 | 值 | 单位 |
| 产品尺寸 | 975*4165 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 135 | W |
| 效率 | 80 | % |
| 增益 | 21.0 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 442 mA, 频率 = 2.6 GHz
DXG1CHD8A-F2EF is a 500 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 3300 | MHz |
| Frequency (Max.) | 3800 | MHz |
| Supply Voltage (Typ.) | 52 | V |
| Psat (Typ.) | 56.5 | dBm |
| Power Gain @ 3400 MHz | 14.0 | dB |
| Efficiency @ 3400 MHz | 42.0 | % |
| ACPR @ 3400 MHz | -28.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, Test condition: VDS = 52 V, IDQA = 400 mA, VGSB = - 5.2 V,Pout = 48.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
D2H120DE1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率 、高增益、易于匹配、宽带宽等特点 ，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 860*2710 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 120 | W |
| 效率 | 81 | % |
| 增益 | 20.8 | dB |
效率和增益指标为对应2.6GHz测试频点 、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 383 mA, 频率 = 2.6 GHz
DXG2CH50A-200EF is a 200 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 4800 | MHz |
Frequency (Max.) | 5000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 53.2 | dBm |
Power Gain @ 4900 MHz | 14.2 | dB |
Efficiency @ 4900 MHz | 44.5 | % |
| ACPR @ 4900 MHz | -28.5/-47 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 200 mA, VGSB = - 4.8 V, Pout = 44.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
D2H095DE1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益 、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 785*2685 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 95 | W |
| 效率 | 81 | % |
| 增益 | 21.0 | dB |
效率和增益指标为对应2.6GHz测试频点 、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 297 mA, 频率 = 2.6 GHz
DOD1H0015-1800EF is a 1800 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for RF energy applications at frequencies from DC to 1500 MHz.
Parameter | Value | Unit |
Frequency (Min.) | DC | MHz |
Frequency (Max.) | 1500 | MHz |
Supply Voltage (Typ.) | 50 | V |
Psat (Typ.) | 61.5 | dBm |
Power Gain @ 650 MHz | 18.0 | dB |
Efficiency @ 650 MHz | 79.0 | % |
Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, IDQ = 200 mA, test signal is CW.
D2H065DE1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT） ，具有高效率、高增益 、易于匹配、宽带宽等特点 ，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 880*2000 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 65 | W |
| 效率 | 82 | % |
| 增益 | 21.5 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件 ：VDD = 48 V, IDQ = 189 mA, 频率 = 2.6 GHz
D2H065DB1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择 。
| 参数 | 值 | 单位 |
| 产品尺寸 | 845*1995 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 65 | W |
| 效率 | 82 | % |
| 增益 | 21.8 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 193 mA, 频率 = 2.6 GHz
D2H055DB1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益 、易于匹配 、宽带宽等特点 ，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 785*1755 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 55 | W |
| 效率 | 82 | % |
| 增益 | 22.0 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 162 mA, 频率 = 2.6 GHz
DOD1H2425-600EF is a 600 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 2400 | MHz |
Frequency (Max.) | 2500 | MHz |
Supply Voltage (Typ.) | 50 | V |
Psat (Typ.) | 57.4 | dBm |
Power Gain @ 2450 MHz | 14.7 | dB |
Efficiency @ 2450 MHz | 73.5 | % |
Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, VGS = - 4.8 V, test signal is CW.
D2H046DA1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益、易于匹配、宽带宽等特点 ，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 880*1640 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 46 | W |
| 效率 | 82 | % |
| 增益 | 21.3 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件 ：VDD = 48 V, IDQ = 143 mA, 频率 = 2.6 GHz
D2H042DB1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率、高增益 、易于匹配 、宽带宽等特点 ，是各种射频和微波应用的理想选择 。
| 参数 | 值 | 单位 |
| 产品尺寸 | 785*1515 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 42 | W |
| 效率 | 82 | % |
| 增益 | 22.7 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 126 mA, 频率 = 2.6 GHz
D2H039DB1是一款碳化硅（SiC）基氮化镓（GaN）高电子迁移率晶体管（HEMT），具有高效率 、高增益、易于匹配、宽带宽等特点，是各种射频和微波应用的理想选择。
| 参数 | 值 | 单位 |
| 产品尺寸 | 785*1395 | mm |
| 应用电压 | 48 | V |
| 典型功率 | 39 | W |
| 效率 | 82 | % |
| 增益 | 22.7 | dB |
效率和增益指标为对应2.6GHz测试频点、最大效率点下的仿真数据
仿真测试条件：VDD = 48 V, IDQ = 116 mA, 频率 = 2.6 GHz
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